Astronomical detection at infrared wavelengths is crucial in astrophysics due to the critical
information in this wavelength range. Blocked impurity band (BIB) infrared detectors are …

Hyperdoped germanium (Ge) has demonstrated increased sub-bandgap absorption,
offering potential applications in the short-wavelength-infrared spectrum (1.0–3.0 μm). This …

With increasing demand for infrared (IR) photonics and optoelectronics, germanium (Ge)
has recently regained attention due to its outstanding optical properties in the near infrared …

Strong sub-bandgap absorption of hyperdoped silicon caused by an impurity deep band has
attracted a lot of interest in recent years, which is promising for photodetector application …

Silicon photonics has become the preferred candidate for technologies applicable to
multifarious fields. However, the applications are strictly limited by the intrinsic in-band photo …

In this work, we present the formation of silicon layers hyperdoped with selenium through Se
implantation followed by pulsed laser annealing. The concentration depth distribution of Se …

Fs-laser irradiation is a promising fabrication method for future broadband optoelectronic
applications as it creates antireflective micro-and nanoscale structures on semiconductor …

Herein, the structural properties and chemical composition of Ge samples implanted with
tellurium at cryogenic temperatures are analyzed, focusing on the role of the native oxide …

Fs-laser irradiation is a promising fabrication method for future broadband optoelectronic
applications as it creates antireflective micro-and nanoscale structures on semiconductor …

In this work we have successfully hyperdoped germanium with tellurium with a concentration
peak of 10 21 cm− 3. The resulting hyperdoped layers show good crystallinity and sub …