Physics-of-failure, condition monitoring, and prognostics of insulated gate bipolar transistor modules: A review

H Oh, B Han, P McCluskey, C Han… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven
largely by the increasing demand for an efficient way to control and distribute power in the …

Condition monitoring for device reliability in power electronic converters: A review

S Yang, D Xiang, A Bryant, P Mawby… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
Condition monitoring (CM) has already been proven to be a cost effective means of
enhancing reliability and improving customer service in power equipment, such as …

Ageing and failure modes of IGBT modules in high-temperature power cycling

V Smet, F Forest, JJ Huselstein… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
This paper presents an experimental study on the ageing of insulated-gate bipolar transistor
(IGBT) power modules. The aim is to identify the effects of power cycling on these devices …

Review of thermal packaging technologies for automotive power electronics for traction purposes

J Broughton, V Smet… - Journal of …, 2018 - asmedigitalcollection.asme.org
Due to its superior electrical and thermal characteristics, silicon carbide power modules will
soon replace silicon modules to be mass-produced and implemented in all-electric and …

Real-time temperature estimation for power MOSFETs considering thermal aging effects

H Chen, B Ji, V Pickert, W Cao - IEEE Transactions on Device …, 2013 - ieeexplore.ieee.org
This paper presents a novel real-time power-device temperature estimation method that
monitors the power MOSFET's junction temperature shift arising from thermal aging effects …

Mission profile-based reliability design and real-time life consumption estimation in power electronics

M Musallam, C Yin, C Bailey… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Power electronics are efficient for conversion and conditioning of the electrical energy
through a wide range of applications. Proper life consumption estimation methods applied …

Turn-off time as an early indicator of insulated gate bipolar transistor latch-up

DW Brown, M Abbas, A Ginart, IN Ali… - … on power electronics, 2011 - ieeexplore.ieee.org
In this paper, effects preceding a latch-up fault in insulated gate bipolar transistors (IGBTs)
are studied. Primary failure modes associated with IGBT latch-up faults are reviewed …

Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs

E Deng, Z Zhao, Q Xin, J Zhang, Y Huang - Microelectronics Reliability, 2017 - Elsevier
The insulated gate bipolar transistor (IGBT) has been widely employed in such applications
as alternate current motors and inverters for its lower driving power and lower on-state …

Topology optimization for minimizing the maximum temperature of transient heat conduction structure

S Wu, Y Zhang, S Liu - Structural and Multidisciplinary Optimization, 2019 - Springer
In this paper, a topology optimization model is proposed for transient heat conduction
structure design. In this model, a new performance index, named as the Regional …

Comparison of IGBT junction temperature measurement and estimation methods-a review

MHM Sathik, J Pou, S Prasanth, V Muthu… - … Asian conference on …, 2017 - ieeexplore.ieee.org
Recent growth of power semiconductor device market has been driven largely by the
growing demand for an efficient way to convert and distribute energy in the field of …