Structural Instability Stimulated Heteroatoms Co‐Doping of 2D Quaternary Semiconductor for Optoelectronic Applications
Although the structural and electrical engineering of transition metal dichalcogenides using
atomic doping or doping‐induced phase modulation can be used to attain high …
atomic doping or doping‐induced phase modulation can be used to attain high …
[HTML][HTML] Tailoring phase transition of Mo-S-Te ternary system using Heat-Driven process for target functionalities
Although structural engineering and phase modulation of transition metal dichalcogenides
(TMDs) can be used to implement high-performance optoelectronic devices or energy cells …
(TMDs) can be used to implement high-performance optoelectronic devices or energy cells …
Enhance the Electrical and Photoelectrical Performance of MoS Transistor With Polyimide Gate Dielectric by Microwave Annealing
Y Zhang, X Su, S Cui, H Yang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Through a low-cost approach, molybdenum disulfide (MoS2) transistors with polyimide (PI)
dielectric layer that is more compatible with flexible electronics have been prepared, and …
dielectric layer that is more compatible with flexible electronics have been prepared, and …