Van der Waals Ferroelectrics: Theories, Materials, and Device Applications
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory‐
predicted or laboratory‐validated to possess in‐plane (IP) and/or out‐of‐plane (OOP) …
predicted or laboratory‐validated to possess in‐plane (IP) and/or out‐of‐plane (OOP) …
Nanomaterials for flexible neuromorphics
G Ding, H Li, JY Zhao, K Zhou, Y Zhai, Z Lv… - Chemical …, 2024 - ACS Publications
The quest to imbue machines with intelligence akin to that of humans, through the
development of adaptable neuromorphic devices and the creation of artificial neural …
development of adaptable neuromorphic devices and the creation of artificial neural …
High-performance van der Waals antiferroelectric CuCrP2S6-based memristors
Layered thio-and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising
building blocks for next-generation nonvolatile memory devices. However, because of the …
building blocks for next-generation nonvolatile memory devices. However, because of the …
2D Ferroic Materials for Nonvolatile Memory Applications
H Wang, Y Wen, H Zeng, Z Xiong, Y Tu… - Advanced …, 2023 - Wiley Online Library
The emerging nonvolatile memory technologies based on ferroic materials are promising for
producing high‐speed, low‐power, and high‐density memory in the field of integrated …
producing high‐speed, low‐power, and high‐density memory in the field of integrated …
Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure
Z Zhong, S Wu, X Li, Z Wang, Q Yang, B Huang… - ACS …, 2023 - ACS Publications
The two-dimensional layered material CuInP2S6 (CIPS) has attracted significant research
attention due to its nontrivial physical properties, including room-temperature ferroelectricity …
attention due to its nontrivial physical properties, including room-temperature ferroelectricity …
Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor
Combining logical function and memory characteristics of transistors is an ideal strategy for
enhancing computational efficiency of transistor devices. Here, we rationally design a tri …
enhancing computational efficiency of transistor devices. Here, we rationally design a tri …
Spatially Resolved Light‐Induced Ferroelectric Polarization in α‐In2Se3/Te Heterojunctions
K Zhang, H Li, H Mu, Y Li, P Wang, Y Wang… - Advanced …, 2024 - Wiley Online Library
Light‐induced ferroelectric polarization in 2D layered ferroelectric materials holds promise in
photodetectors with multilevel current and reconfigurable capabilities. However, translating …
photodetectors with multilevel current and reconfigurable capabilities. However, translating …
2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects
C Leblanc, S Song, D Jariwala - Current Opinion in Solid State and …, 2024 - Elsevier
Ferroelectric and two-dimensional (2D) materials are both heavily investigated classes of
electronic materials. This is unsurprising since they both have superlative fundamental …
electronic materials. This is unsurprising since they both have superlative fundamental …
Recent Advances in Layered Two‐Dimensional Ferroelectrics from Material to Device
S Lin, G Zhang, Q Lai, J Fu, W Zhu… - Advanced Functional …, 2023 - Wiley Online Library
With the advent of the post Moore era, modern electronics require further device
miniaturization of all electronic components, particularly ferroelectric memories, due to the …
miniaturization of all electronic components, particularly ferroelectric memories, due to the …
The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications
In recent years, there has been growing interest in functional devices based on two-
dimensional (2D) materials, which possess exotic physical properties. With an ultrathin …
dimensional (2D) materials, which possess exotic physical properties. With an ultrathin …