We study the impact of external electric field F EXT on electron mobility μ in asymmetric Al x
Ga 1-x As coupled parabolic quantum well structure. The asymmetry in the structure …

The strong piezoelectric field in the In x Ga 1− x N/GaN quantum well (QW) LEDs, separates
the electrons and holes spatially, which decreases the luminescence. Various shapes and …

Nitride‐based high power LEDs with finger‐like SiO2 current blocking layer (CBL), three‐
dimensional (3D) patterned step‐like ITO double layers and wavy sidewalls were fabricated …

Linear and third-order nonlinear optical absorptions in III–V nitrides semi-parabolic quantum
wells are investigated. The analytical expression of linear and third-order nonlinear optical …

Simultaneous effects of electric, magnetic, and non-resonant intense laser field on the
nonlinear optical properties of a GaAs quantum well with an anharmonic confinement …

We explore two parabolic quantum well (PQW) samples, with and without Bragg mirrors, in
order to optimize the building blocks of a bosonic cascade laser. The photoluminescence …

Herein, it is shown that the oscillation of low temperature electron mobility μ can be obtained
as a function of external electric field F in AlxGa1− xAs based V‐shaped double quantum …

The effect of asymmetric doping profile on the electron mobility μ is studied in a Field Effect
Transistor (FET) structure based on Al x Ga 1− x As double V-shaped quantum well (D …

A method to characterize the interface of InGaN/GaN quantum wells by X‐ray reflectivity is
presented. The interface roughness can be obtained from the ratio of diffuse to specular …

The variations of the transition energy (TE) as well as transition probability (TP) with current
for various indium (In) concentrations and different QW widths have been investigated for In …