Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
Growth and properties of the dilute bismide semiconductor GaAs1− xBix a complementary alloy to the dilute nitrides
In this review we describe the growth and properties of the dilute bismide semiconductor
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …
Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared
SJ Sweeney, SR Jin - Journal of applied physics, 2013 - pubs.aip.org
GaAsBiN is a potentially interesting alloy which may be exploited in near-and mid-infrared
photonic devices. Here we present the predicted band parameters such as band gap (E g) …
photonic devices. Here we present the predicted band parameters such as band gap (E g) …
Composition dependence of photoluminescence of GaAs1− xBix alloys
Room temperature photoluminescence (PL) spectra have been measured for GaAs 1− x Bi x
alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy …
alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy …
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1− xBix
We describe how the Bi content of Ga As 1− x Bi x epilayers grown on GaAs can be
controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth …
controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth …
Structural and electronic properties of III-V bismuth compounds
We have performed ab initio self-consistent calculations based on the full potential linear
augmented plane-wave method with the generalized gradient approximation to investigate …
augmented plane-wave method with the generalized gradient approximation to investigate …
Band gaps of the dilute quaternary alloys GaNxAs1− x− yBiy and Ga1− yInyNxAs1− x
We report strong band gap photoluminescence at room temperature in dilute quaternary Ga
N x As 1− x− y Bi y alloys (x< 1.6%, y< 2.6%) grown by molecular beam epitaxy. The band …
N x As 1− x− y Bi y alloys (x< 1.6%, y< 2.6%) grown by molecular beam epitaxy. The band …
Surface morphology and Bi incorporation in GaSbBi (As)/GaSb films
A Duzik, JM Millunchick - Journal of crystal growth, 2014 - Elsevier
Abstract Several GaSbBi (As)/GaSb films were grown to investigate the effects of Bi on GaSb
surface morphology and bulk composition as a function of growth conditions. Scanning …
surface morphology and bulk composition as a function of growth conditions. Scanning …
[HTML][HTML] Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
We have examined the alloy composition dependence of the energy bandgap and
electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions …
electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions …
Theoretical investigation of GaAsNBi/GaAs materials for optoelectronic applications
In this paper, we report a theoretical investigation of bandgap properties of GaAsNBi based
materials on GaAs substrates. We look at the influence of nitrogen (N) and bismuth (Bi) …
materials on GaAs substrates. We look at the influence of nitrogen (N) and bismuth (Bi) …