The recent discovery of the ability to perform direct epitaxial growth of graphene layers on
semiconductor Ge surfaces led to a huge interest in this topic. One of the reasons for this …

The synthesis of graphene directly on Ge and on Ge deposited on Si provides a scalable
route toward integrating graphene onto conventional semiconductors. Here, we elucidate …

We systematically investigate the chemical vapor deposition growth of graphene on Ge
(110) as a function of the deposition temperature close to the Ge melting point. By merging …

Graphene grown directly on germanium is a possible route for the integration of graphene
into nanoelectronic devices as well as it is of great interest for materials science. The …

We investigate the reproducibility of repeated intercalation of hydrogen in graphene/Ge
(110) and the formation of H 2 nanobubbles after thermal treatments. By exploiting high …

Combining scanning tunneling microscopy and angle-resolved photoemission
spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by …

Graphene quality indicators obtained by Raman spectroscopy have been correlated to the
structural changes of the graphene/germanium interface as a function of in-vacuum thermal …

Radial polarization converters can convert an incident light into a radially polarized light,
which is beneficial in a variety of applications. In this paper, a new design of holographic …

This Letter proposes a holographic cylindrical vector beam converter (HCVBC) design that
incorporates a continuously polarization-selective volume hologram circular-grating. A …

The advances in electronics have been achieved by downscaling the physical size of
devices' components to the nanometer range. However, already in the late 1990s, it was …