Vapor phase growth of semiconductor nanowires: key developments and open questions
L Güniat, P Caroff, A Fontcuberta i Morral - Chemical reviews, 2019 - ACS Publications
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
Metal‐assisted chemical etching of silicon in oxidizing HF solutions: origin, mechanism, development, and black silicon solar cell application
C Huo, J Wang, H Fu, X Li, Y Yang… - Advanced Functional …, 2020 - Wiley Online Library
Metal‐assisted chemical etching (MacEtch) of silicon in oxidizing hydrofluoric acid (HF)
solutions has emerged as a prominent top‐down micro/nanofabrication approach for a wide …
solutions has emerged as a prominent top‐down micro/nanofabrication approach for a wide …
[图书][B] Materials for advanced packaging
D Lu, CP Wong - 2009 - Springer
With consistently active involvement in the electronic packaging conferences such as the
IEEE Electronic Components and Technology Conference (ECTC) in the last several years …
IEEE Electronic Components and Technology Conference (ECTC) in the last several years …
[HTML][HTML] β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching
In this work, β-Ga 2 O 3 fin field-effect transistors (FinFETs) with metalorganic chemical
vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga 2 O …
vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga 2 O …
Large-scale synthesis of highly uniform silicon nanowire arrays using metal-assisted chemical etching
The combination of metal-assisted chemical etching (MACE) with colloidal lithography has
emerged as a simple and cost-effective approach to nanostructure silicon. It is especially …
emerged as a simple and cost-effective approach to nanostructure silicon. It is especially …
Structuring of Si into multiple scales by metal‐assisted chemical etching
RP Srivastava, DY Khang - Advanced Materials, 2021 - Wiley Online Library
Structuring Si, ranging from nanoscale to macroscale feature dimensions, is essential for
many applications. Metal‐assisted chemical etching (MaCE) has been developed as a …
many applications. Metal‐assisted chemical etching (MaCE) has been developed as a …
Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism
Abstract β-Ga 2 O 3, a promising ultra-wide bandgap material for future high-power
electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous …
electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous …
High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching
β-Ga2O3, with a bandgap of∼ 4.6–4.9 eV and readily available bulk substrates, has
attracted tremendous interest in the wide bandgap semiconductor community. Producing …
attracted tremendous interest in the wide bandgap semiconductor community. Producing …
[HTML][HTML] Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing
Defying the isotropic nature of traditional chemical etch, metal-assisted chemical etching
(MacEtch) has allowed spatially defined anisotropic etching by using patterned metal …
(MacEtch) has allowed spatially defined anisotropic etching by using patterned metal …
Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?
K Ishikawa, K Karahashi, T Ishijima… - Japanese Journal of …, 2018 - iopscience.iop.org
In this review, we discuss the progress of emerging dry processes for nanoscale fabrication
of high-aspect-ratio features, including emerging design technology for manufacturability …
of high-aspect-ratio features, including emerging design technology for manufacturability …