Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices
Y Yang, G Cheng, P Mende, IG Calizo, RM Feenstra… - Carbon, 2017 - Elsevier
Quantized magnetotransport is observed in 5.6× 5.6 mm 2 epitaxial graphene devices,
grown using highly constrained sublimation on the Si-face of SiC (0001) at high temperature …
grown using highly constrained sublimation on the Si-face of SiC (0001) at high temperature …
Modulation of annealing process for the direct growth of multi-layered graphene on diamond with high uniformity
Y Liu, T Wang, L Wan, S Cheng, L Li, H Li - Applied Surface Science, 2024 - Elsevier
In this paper, graphene with good uniformity was successfully grown on (1 0 0)-orientation
single crystal diamond substrate directly by regulating the annealing and cooling …
single crystal diamond substrate directly by regulating the annealing and cooling …
Temperature dependence of electron density and electron–electron interactions in monolayer epitaxial graphene grown on SiC
We report carrier density measurements and electron–electron (e–e) interactions in
monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier …
monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier …
Crossover from Efros–Shklovskii to Mott variable range hopping in monolayer epitaxial graphene grown on SiC
YC Lee, CI Liu, Y Yang, RE Elmquist… - Chinese journal of physics, 2017 - Elsevier
We report variable range hopping (VRH) transport in monolayer epitaxial graphene grown
on SiC. A crossover from Efros–Shklovskii (ES) VRH to Mott VRH can be observed by …
on SiC. A crossover from Efros–Shklovskii (ES) VRH to Mott VRH can be observed by …