Recent progress of integrated circuits and optoelectronic chips
Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern
information society. The IC industry has been driven by the so-called “Moore's law” in the …
information society. The IC industry has been driven by the so-called “Moore's law” in the …
The evolution of manufacturing technology for GaN electronic devices
AC Liu, PT Tu, C Langpoklakpam, YW Huang… - Micromachines, 2021 - mdpi.com
GaN has been widely used to develop devices for high-power and high-frequency
applications owing to its higher breakdown voltage and high electron saturation velocity …
applications owing to its higher breakdown voltage and high electron saturation velocity …
Power delivery for high-performance microprocessors—challenges, solutions, and future trends
K Radhakrishnan, M Swaminathan… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
The power delivery requirements for the early microprocessors were fairly rudimentary due
to the relatively low power levels. However, several decades of exponential scaling powered …
to the relatively low power levels. However, several decades of exponential scaling powered …
Self-Aligned E-Mode GaN p-Channel FinFET With ION > 100 mA/mm and ION/IOFF > 10⁷
This letter demonstrates self-aligned-channel FinFETs based on a GaN-on-Si wafer. While
the self-aligned gate process helps to achieve shortest possible source-to-drain distance to …
the self-aligned gate process helps to achieve shortest possible source-to-drain distance to …
[HTML][HTML] A review of GaN RF devices and power amplifiers for 5G communication applications
In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power
amplifier, a critical component with stringent specification requirements that dictates the …
amplifier, a critical component with stringent specification requirements that dictates the …
Enhancement-mode 300-mm GaN-on-Si (111) with integrated Si CMOS for future mm-wave RF applications
A 300-mm GaN-on-Si (111) high-gate dielectric E-mode GaN MOSHEMT technology is
demonstrated with uniform process and wafer characteristics. The E-mode GaN MOSHEMT …
demonstrated with uniform process and wafer characteristics. The E-mode GaN MOSHEMT …
Quasi-physical equivalent circuit model of RF leakage current in substrate including temperature dependence for GaN-HEMT on Si
Y Yamaguchi, T Oishi - IEEE Transactions on Microwave …, 2023 - ieeexplore.ieee.org
This article proposes a quasi-physical equivalent circuit model of RF leakage current in the
substrate including temperature dependence for GaN-high-electron-mobility transistor …
substrate including temperature dependence for GaN-high-electron-mobility transistor …
Gallium nitride power amplifiers for Ka-band Satcom applications: Requirements, trends, and the way forward
The current trend in satellite communications is moving toward high carrier frequencies and
complex modulated signals, which have a nonconstant envelope, such as quadrature …
complex modulated signals, which have a nonconstant envelope, such as quadrature …
AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches
This paper presents two designs of millimeter-wave single-pole single-throw switches based
on AlGaN/GaN heterostructure. The switches are based on two approaches to the travelling …
on AlGaN/GaN heterostructure. The switches are based on two approaches to the travelling …
Wafer-Scale GaN-Si (100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and …
In this article, wafer-scale gallium nitride (GaN)-Si (100) monolithic integration material was
achieved by transfer printing and self-aligned etching technology. A monolithic …
achieved by transfer printing and self-aligned etching technology. A monolithic …