With the development of thin-film optoelectronic components and the increasing
requirements for improved integration and performance of ultra-large-scale integrated …

In this work, a non-toxic and environmentally friendly aqueous-solution-based method has
been adopted to prepare gadolinium-doped hafnium oxide (HfO 2) gate dielectric thin films …

Low-temperature solution-processed inorganic–organic hybrid gate dielectrics are
considered as emerging candidates for future low-cost flexible electronic devices, which are …

High-speed operation and low-power-consumption requirements have accelerated the
development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work …

Lanthanum-doped HfO2 films were deposited on Si by sol–gel technology. The effects of
annealing temperature on the optical properties, interface chemistry, and energy band …

In this article, the preparation of HfLaO x gate dielectric thin films by the spin coating method
is proposed. The in-depth physical properties of the as-prepared HfLaO x films were …

Metal-oxide high-k dielectric films have received considerable attention in lowering the
driving voltage and power consumption in semiconductor devices. Here, we demonstrate …

In this article, we report the preparation of Al-doped ZrO2 (AZO) thin films by the sol–gel
method. The electrical properties, microstructure, and optical properties of AZO high-k gate …

In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to
fabricate the gate dielectric on the Si substrate and successfully integrate the In2O3/HfO2 …

In this study, we evaluated the structural, chemical, and electrical properties of ternary alloy
aluminum yttrium oxide (Al 2-x Y x O 3) films prepared by employing a low-cost spin-cast …