Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …

We present a review of the current status of research into new semiconductor materials for
use as particle tracking detectors in very high radiation environments. This work is carried …

In the last two decades we have assisted to a rush towards finding a 3 He-replacing
technology capable of detecting neutrons emitted from fissile isotopes. The demand stems …

Abstract “A Craftsman Must Sharpen His Tools to Do His Job,” said Confucius. Nuclear
detection and readout techniques are the foundation of particle physics, nuclear physics …

Semiconductor tracking detectors at experiments such as ATLAS and LHCb at the CERN
Large Hadron Collider (LHC) will be subjected to intense levels of radiation. The proposed …

The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for
Very High Luminosity Colliders” is developing radiation tolerant tracking detectors for the …

We report the results of an experimental study on the radiation hardness of 4H-SiC diodes
used as alpha-particle detectors with 1 MeV neutrons up to a fluence of 8times10 15 n/cm 2 …

Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that
make it especially appropriate for radiation monitoring in radiation harsh environments and …

In this work we analyzed the radiation hardness of SiC p/sup+/n diodes used as minimum
ionizing particle (MIP) detectors after very high 1 MeV neutron fluences. The diode structure …