Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification
Modern electronics are developing electronic-optical integrated circuits, while their
electronic backbone, eg, field-effect transistors (FETs), remains the same. However, further …
electronic backbone, eg, field-effect transistors (FETs), remains the same. However, further …
Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET
W Xu, H Wong, K Kakushima, H Iwai - Microelectronic engineering, 2015 - Elsevier
A quasi-analytical model bas been developed for predicting the current–voltage
characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect …
characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect …
Electron transport in AlGaAs cylindrical quantum wire sandwiched between two GaAs cylindrical quantum well wires
In this work, we study theoretically and analytically the electronic transport through a
nanowire structure composed of a finite cylindrical quantum wire (CQWR) based on barrier …
nanowire structure composed of a finite cylindrical quantum wire (CQWR) based on barrier …
[PDF][PDF] Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)
In this paper, electrical characteristics of the double gate metal oxide semiconductor field
effect transistor (DG MOSFET) and that of gate all around silicon nanowire transistor (GAA …
effect transistor (DG MOSFET) and that of gate all around silicon nanowire transistor (GAA …
An Explicit Quantum-Mechanical Compact Model for the IV Characteristics of Cylindrical Nanowire MOSFETs
In this paper, we developed an analytical quantum-mechanical model for the IV
characteristics of cylindrical nanowire junctionless MOSFETs. Our compact model is based …
characteristics of cylindrical nanowire junctionless MOSFETs. Our compact model is based …
Dual material gate nanowire field effect diode (DMG-NWFED): Operating principle and properties
M Vadizadeh - Microelectronics Journal, 2018 - Elsevier
In this paper the impacts of warp-around gates on the electrical characteristics of a field
effect diode (FED) have been presented in terms of I ON/I OFF ratio and gate delay by a …
effect diode (FED) have been presented in terms of I ON/I OFF ratio and gate delay by a …
Fully Analytical Compact Model for the I–V Characteristics of Large Radius Junctionless Nanowire FETs
In this paper, we developed an analytical model for the IV characteristics of junctionless
nanowire FETs (JLNWFETs) in which the radius of the nanowire is large enough to allow …
nanowire FETs (JLNWFETs) in which the radius of the nanowire is large enough to allow …
A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors
We present a compact model of the gate tunneling current in cylindrical surrounding-gate
(SG) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on quantum …
(SG) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on quantum …
A comparative study of Si, Ge and GaAs cylindrical nanowire transistors with non equilibrium Greens function approach
V Gupta, RS Gupta, RK Singh - Journal of Computational and …, 2014 - ingentaconnect.com
In this paper we compare the electrical behavior of Silicon (Si), Germanium (Ge) and
Gallium Arsenide (GaAs) nanowire surrounding gate field effect transistors for high …
Gallium Arsenide (GaAs) nanowire surrounding gate field effect transistors for high …
Uncoupled mode space approach for analysis of nanoscale strained junctionless double-gate MOSFET
R Hosseini - Journal of Computational Electronics, 2016 - Springer
In this paper, we have analyzed the electrical characteristics of Strained Junctionless
Double-Gate MOSFET (Strained JL DG MOSFET). A quantum mechanical transport …
Double-Gate MOSFET (Strained JL DG MOSFET). A quantum mechanical transport …