In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …

High-quality narrow bandgap semiconductors nanowires (NWs) challenge the flexible near-
infrared (NIR) photodetectors in next-generation imaging, data communication …

Limited by the severe surface recombination and large bandgap, it is still a challenge to
achieve a high-performance broad-spectrum photodetector based on CdS nanowires …

Compared with the traditional imaging systems, the polarization imaging systems are
capable of improving the detection and recognition ability of the target by detecting the …

与传统成像系统相比, 偏振成像系统通过探测目标物在不同状态下的明显偏振差异,
提高对目标物的探测和识别能力, 因而被广泛应用于复杂环境或有伪装物的目标探测 …

Incorporation of bismuth into the III–V semiconductors expands the bandgap towards the
mid-infrared range by bandgap bowing and spin–orbit splitting, providing new opportunities …

The growth kinetics of vertical III–V nanowires (NWs) were clarified long ago. The increasing
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …

Owing to the narrow bandgap and excellent optoelectronic properties, III‐Sb nanowires
(NWs) enable efficient optical response from near‐infrared to mid‐infrared, making them …

The III-V nanowire (NW) structure is a good candidate for developing photodetectors.
However, the high-density surface states caused by the large surface-to-volume ratio …

Detection of short-wave infrared (SWIR) and mid-wave infrared (MWIR) emissions remains
challenging despite their importance in many emerging applications, including night vision …