This white paper provides an overview of the physical failure mechanisms and failure modes
of GaN rf HEMTs, and of the related methodology for reliability study. The paper concisely …

GaN y AlN son materiales semiconductores piezoeléctricos del grupo III-V. La heterounión
AlGaN/GaN presenta una elevada carga de polarización tanto piezoeléctrica como …

On-state degradation of AlGaN/GaN high electron mobility transistors (HEMTs) was
quantified as a function of defect generation and strain evolution using high-resolution …

During the last few years, AIGaN/GaN high electron mobility transistors (HEMTs) have been
intensively studied for high frequency high power applications. In spite of this great interest …

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are promising for high-
voltage, high-frequency and high-power applications such as DC-DC convertors, cellular …

Using measured gate-source capacitance–voltage (C–V) curves and forward current–
voltage (I–V) curves for In 0.17 Al 0.83 N/GaN heterostructure field-effect transistors (HFETs) …

As the demand for faster, more efficient, and more robust electronics continues to grow, new
materials beyond silicon need to be explored. In the field of power electronics, gallium …

Abstract Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior
performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based …

AlGaN/GaN devices suffer from drain current degradation in both the ON and OFF states,
however the mechanism by which this degradation takes place is quite different in each …