A 0.6 V, ultra-low power, 1060 μm2 self-biased PTAT voltage generator for implantable biomedical devices

Ó Pereira-Rial, JM Carrillo, P López… - AEU-International Journal …, 2021 - Elsevier
A small size, low-power, self-cascode and self-biased voltage generator based on a PTAT
cell for implantable applications is presented. The approach can be extended to other …

Design of an embedded CMOS temperature sensor for passive RFID tag chips

F Deng, Y He, B Li, L Zhang, X Wu, Z Fu, L Zuo - Sensors, 2015 - mdpi.com
This paper presents an ultra-low embedded power temperature sensor for passive RFID
tags. The temperature sensor converts the temperature variation to a PTAT current, which is …

800-nA process-and-voltage-invariant 106-dB PSRR PTAT current reference

A Amaravati, M Dave, MS Baghini… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
This brief presents a novel process-and-voltage-invariant proportional to absolute
temperature (PTAT) current reference. The proposed circuit is designed and fabricated in …

Nanopower, sub-1 V, CMOS voltage references with digitally-trimmable temperature coefficients

P Luong, C Christoffersen… - … on Circuits and …, 2016 - ieeexplore.ieee.org
Two variants of a MOS-only voltage reference are proposed. They are based on MOSFETs
operating at a constant inversion level which cancels out nonlinearities of their temperature …

MOSFET only low power sub‐bandgap voltage reference by subtraction of slope compensated proportional‐to‐absolute‐temperature voltage references

N Thomas Abraham, D KJ - International Journal of Circuit …, 2024 - Wiley Online Library
Voltage references are typically designed by combining a complimentary to absolute
temperature (CTAT) and proportional to absolute temperature (PTAT) voltage references …

A sub-1V 32nA process, voltage and temperature invariant voltage reference circuit

A Anvesha, MS Baghini - … on VLSI Design and 2013 12th …, 2013 - ieeexplore.ieee.org
This paper presents a novel process, voltage and temperature (PVT) invariant voltage
reference generator using subthreshold MOSFETS. The proposed circuit uses weighted …

Design, Fabrication, and Characterization of a PTAT Sensor Using CMOS Technology

M Szermer, M Jankowski, M Janicki - Electronics, 2024 - mdpi.com
This paper presents the design of an integrated temperature sensor. The sensor was
manufactured using the 3 µm CMOS technology. The proportional to absolute temperature …

A high precision logarithmic-curvature compensated all CMOS voltage reference

T Ghanavati Nejad, E Farshidi, H Sjöland… - … integrated circuits and …, 2019 - Springer
This paper presents a resistor-less high-precision, sub-1 V all-CMOS voltage reference. A
curvature-compensation method is used to cancel the logarithmic temperature dependence …

0.7 V supply self-biased nanoWatt MOS-only threshold voltage monitor

OE Mattia, H Klimach, S Bampi… - 2015 IEEE International …, 2015 - ieeexplore.ieee.org
This work presents a self-biased MOSFET threshold voltage V T0 monitor. The threshold
condition is defined based on a current-voltage relationship derived from a continuous …

High PSRR nano-watt MOS-only threshold voltage monitor circuit

CJA Gomez, H Klimach, E Fabris… - 2015 28th Symposium …, 2015 - ieeexplore.ieee.org
This work presents a high PSRR nano-watt resistorless threshold voltage (V T0) monitor
circuit that can be used in temperature sensors, voltage and current references, radiation …