Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Material science and device physics in SiC technology for high-voltage power devices
T Kimoto - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
[HTML][HTML] Silicon carbide: A unique platform for metal-oxide-semiconductor physics
A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …
High-voltage SiC power devices for improved energy efficiency
T Kimoto - Proceedings of the Japan Academy, Series B, 2022 - jstage.jst.go.jp
Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si)
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
Abstract 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) and
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …
Ion implantation doping in silicon carbide and gallium nitride electronic devices
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …
excellent materials for the next generation of high-power and high-frequency electronic …
Interface State Density in Atomic Layer Deposited SiO2/ -Ga2O3 ( ) MOSCAPs
K Zeng, Y Jia, U Singisetti - IEEE Electron Device Letters, 2016 - ieeexplore.ieee.org
The interface state density (D it) at the interface between β-Ga 2 O 3 (2̅01) and atomic layer
deposited (ALD) SiO 2 dielectric is extracted using Terman method and conductance …
deposited (ALD) SiO 2 dielectric is extracted using Terman method and conductance …
Comparison of commercial planar and trench SiC MOSFETs by electrical characterization of performance-degrading near-interface traps
The suboptimal performance and low channel-carrier mobility of silicon carbide (SiC) power
MOSFETs are attributed to a high density of oxide traps near the 4H-SiC/SiO2 interface. In …
MOSFETs are attributed to a high density of oxide traps near the 4H-SiC/SiO2 interface. In …