Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate
The total ionizing dose (TID) effect of modulated gate workfunction (MGW) FinFET based
CMOS inverter is designed and analyzed. The post radiation analysis of the voltage transfer …
CMOS inverter is designed and analyzed. The post radiation analysis of the voltage transfer …
Effect of Temperature on RF and Linearity Performance of Inverted-T FinFET
SV Gulhane, GP Mishra - Transactions on Electrical and Electronic …, 2024 - Springer
The influence of temperature on the RF/Analog and linearity parameters of Inverted-T
FinFET is investigated. The Inverted-T FinFET combines the advantages of bulk CMOS and …
FinFET is investigated. The Inverted-T FinFET combines the advantages of bulk CMOS and …
[PDF][PDF] Gate work function variability-dependent short channel effects in nanoscale double gate finFETs: an in-depth comparative analysis
We explored the impact of gate work-function variations on Short Channel Effects (SCEs) in
nanoscale Double Gate FinFETs utilizing GaAs, GaSb, GaN, and Si as semiconductor …
nanoscale Double Gate FinFETs utilizing GaAs, GaSb, GaN, and Si as semiconductor …