Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …

Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …

Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …

In this work, metalorganic chemical vapor deposition (MOCVD) of (010) β-Ga2O3 with fast
growth rates was investigated using trimethylgallium (TMGa) as the gallium (Ga) precursor …

We demonstrate a-Ga 2 O 3 MOSFET with record-high transconductance () of 21 mS/mm
and extrinsic cutoff frequency () and maximum oscillating frequency () of 3.3 and 12.9 GHz …

Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …

Abstract Monoclinic β-Ga 2 O 3 (bandgap= 4.85 eV) is a transparent semiconducting oxide
with very promising perspectives especially in solar blind UV photodetectors and high power …