A 25.5-31GHz Power Amplifier Using Enhancement-Mode High-K Dielectric GaN MOS-HEMTs in 300mm GaN-on-Si Technology
This paper presents the design and characterization of a fully integrated 25.5-31GHz power
amplifier (PA) using enhancement-mode high-k dielectric Gallium nitride (GaN) MOS …
amplifier (PA) using enhancement-mode high-k dielectric Gallium nitride (GaN) MOS …
High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications
YC Weng, CH Chung, CJ Ma, CY Yang… - ECS Journal of Solid …, 2023 - iopscience.iop.org
In this work, a quaternary In 0.04 Al 0.63 Ga 0.33 N/GaN metal-insulator-semiconductor
(MIS)-high electron mobility transistor (HEMT) on Si substrate using a GaN: C back-barrier …
(MIS)-high electron mobility transistor (HEMT) on Si substrate using a GaN: C back-barrier …
Integrated 5-W GaN Doherty Power Amplifier for 5G FR1 Bands with 19 dB Gain Over a 41% Bandwidth
G Bartolotti, A Piacibello… - 2024 IEEE/MTT-S …, 2024 - ieeexplore.ieee.org
This paper presents the design of a Doherty power amplifier for 5G applications in the FR1
5G bands, implemented with WIN's 150 nm GaN/SiC HEMT technology. The design aims to …
5G bands, implemented with WIN's 150 nm GaN/SiC HEMT technology. The design aims to …
RF Technology Roadmap for 5G and 6G RF Front-end Systems
Y Morandini - Technologies Enabling Future Mobile Connectivity & …, 2024 - taylorfrancis.com
The evolution of 5G and 6G wireless systems adds considerable challenges to new RF front-
end designs and their implementation. For 5G FR1 (450 MHz to 6 GHz) and FR2 (20–60 …
end designs and their implementation. For 5G FR1 (450 MHz to 6 GHz) and FR2 (20–60 …
Building the Path to Ubiquitous Wireless Connectivity, from Materials to Systems
L Andia, Y Morandini - … 7th IEEE Electron Devices Technology & …, 2023 - ieeexplore.ieee.org
Wireless systems and applications evolve together with the semiconductor technologies that
make them possible. An essential element of such systems is the RF Front End (RFFE). In …
make them possible. An essential element of such systems is the RF Front End (RFFE). In …