The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–
semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at …

Trapping phenomena degrade the dynamic performance of wide-bandgap transistors.
However, the identification of the related traps is challenging, especially in presence of non …

A comprehensive review of the features of silicon carbide (SiC) and various methods of
deposition of gate oxides are presented in this report. The SiC material, which is mostly …

Fast near-interface (NI) traps have recently been suggested to be the main cause for poor
inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors …

Studying near-valence-band (EV) defects at the insulator–n-type 4 H-Si C interface is
challenging due to the low minority carrier concentration. Herein, we present a technique for …

The initial oxidation of 4H-SiC (0001) surfaces with C-related point defects (Surf CD) is
studied by using first-principles coupled with thermodynamics calculations to gain deeper …

Although nitridation passivates defects at the SiO 2/SiC interface, avoiding the introduction
of nitrogen atoms into SiO 2 is crucial for reliability. This paper presents a method to …

In this paper, we report the fabrication of Al/Al2O3/Yb2O3/Al2O3/n-Si (100) charge trapping
memory device by RF magnetron sputtering technique. The structural and electrical …

In this study, we present the synthesis, characterization, and antibacterial properties of a
cadmium complex using experimental methods, X-ray diffraction, density functional theory …

The state-of-the-art technology for gate oxides on SiC involves the introduction of nitrogen to
reduce the density of interface defects. However, SiC metal–oxide–semiconductor (MOS) …