We investigated the suitability of ammonium persulfate (APS) and potassium oleate (PO)
containing silica dispersions for polishing Co interconnects based on removal and …

We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-
layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally …

It has been difficult to remove BTA-related organic residues (BTA, Cu-BTA, and Co-BTA
complexes) and silica abrasives from various surfaces during post Cu-CMP cleaning when …

Co, a candidate material for barrier and capping layers in 10 nm and smaller Cu
interconnects, is prone to corrosion and galvanic corrosion during chemical mechanical …

By a direct-liquid-evaporation chemical vapor deposition (DLE-CVD) method, we deposited
smooth low-resistance cobalt (Co) and cobalt nitride (CoxN) thin films with excellent …

With the apparent miniaturization trends in interconnection materials, cobalt (Co) is
emerging as a promising interconnect metal. This study suggests persulfate chemicals …

The drive to continuously downscale Cu interconnects in ultra-large-scale integrated (ULSI)
devices requires strategic improvements in materials and their design processes. For …

Two cobalt (II) guanidinate compounds of the general type [((R) 2NC (iPrN) 2) 2Co](R= Me,
SiMe3) were synthesized and characterized by elemental analysis, 1H NMR, and single …

We used atom probe tomography (APT) to study the use of a Cu (Mn) as a seed layer of Cu,
and a Co (W) single-layer as reliable Cu diffusion barriers for future interconnects in ultra …

We investigated the adhesion strength of Cu films grown using chemical vapor deposition
(CVD) on a Co (W) layer, which was grown using atomic layer deposition (ALD), for Cu …