We demonstrate the controlled incorporation of P dopant atoms in Si (001), presenting a
new path toward the creation of atomic-scale electronic devices. We present a detailed study …

Nanostructured surfaces can be broadly defined as substrates in which the typical features
have dimensions in the range 1–100 nm (although the upper limit of 100 nm may be relaxed …

We present a complete fabrication process for the creation of robust nano-and atomic-scale
devices in silicon using a scanning tunneling microscope (STM). In particular we develop …

We propose a new approach to constructing gates for quantum information processing,
exploiting the properties of impurities in silicon. Quantum information, embodied in electron …

Ultrashallow doping is required for both classical field-effect transistors in integrated circuits
and revolutionary quantum devices in quantum computing. In this review, we give a brief …

Over the past two decades, prototype devices for future classical and quantum computing
technologies have been fabricated by using scanning tunneling microscopy and hydrogen …

Integrated circuits and certain silicon-based quantum devices require the precise positioning
of dopant nanostructures, and hydrogen resist lithography can be used to fabricate such …

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with
lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These …

Scanning tunneling microscope lithography can be used to create nanoelectronic devices in
which dopant atoms are precisely positioned in a Si lattice within approximately 1 nm of a …

The reaction of boron trichloride with the H-and Cl-terminated Si (1 0 0) surfaces was
investigated to understand the interaction of this molecule with the surface for designing wet …