Dynamics and physical process of hot carriers in optoelectronic devices

C Liu, Y Lu, R Shen, Y Dai, X Yu, K Liu, S Lin - Nano Energy, 2022 - Elsevier
As an important part of the third-generation photovoltaic concept, hot carrier solar cells
(HCSCs) have attracted extensive attention in the field of energy conversion. As HCSCs …

Study of the coupling of ultra-thin CdSe double quantum wells

JA Lorenzo-Andrade, F Sutara… - Superlattices and …, 2015 - Elsevier
The degree of coupling between the electronic states of adjacent quantum wells (QWs) will
depend on the sample structure and material properties of the QW and the barrier. The …

Features of the Properties of the Surface of (GaAs)1 – xу(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

SZ Zainabidinov, AS Saidov, AY Boboev… - Journal of Surface …, 2021 - Springer
(GaAs) 1–x–у (Ge 2) x (ZnSe) y films with ZnSe quantum dots by the liquid-phase epitaxy
method are grown for the first time. The grown layers had p-type conductivity with a carrier …

Photosensitivity of pSi-n(Si2)1–xy(Ge2) x (ZnSe) y heterostructures with quantum dots

AS Saidov, SN Usmonov, KA Amonov, MS Saidov… - Applied Solar …, 2017 - Springer
The spectral dependences of photosensitivity of p Si-n (Si 2) 1–x–y (Ge 2) x (ZnSe) y
heterostructures and structural features of epitaxial film of (Si 2) 1–x–y (Ge 2) x (ZnSe) y …

Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs) 1-xy (Ge2) x (ZnSe) y

AY Boboev - East European Journal of Physics, 2024 - periodicals.karazin.ua
The photoelectric properties of n-GaAs–p-(GaAs) 1–x–y (Ge 2) x (ZnSe) y heterostructures
have been investigated both in photodiode and photovoltaic modes. It has been revealed …

[引用][C] STRUCTURAL AND MORPHOLOGICAL STUDIES OF (GaAs) 1–x–у (Ge2) x (ZnSe) y SOLID SOLUTIONS WITH QUANTUM DOTS

SZ Zainabidinov, AS Saidov, AY Boboev - Euroasian Journal of Semiconductors …, 2020