Abstract Al/n-Si/Ti 1− x O 2 Cd x O/Al photodiodes were produced using sol–gel and spin
coating methods where CdO dopant was applied on different concentrations (x= 0.0; x …

In this study, quaternary Cu 2 ZnSnS 4 chalcogenide nanocrystal compound prepared by
hydrothermal method was coated on Si with the help of spin coating technique to be used as …

Diamond-like carbon (DLC) films are often investigated for their mechanical properties. In
this report, we assessed the electrical and photovoltaic characteristics of DLC: Ag composite …

Sol–gel methods were used to fabricate Al/p-Si/Cu 2 NiSnS 4/Al quaternary functional solar
detectors. Diffraction, spectroscopy and microscopy were used for the structural …

Substrate surface plays an important role to achieve high performance infrared devices and
high-quality film layers. GaAs (211) B wafers were intensively used in infrared detector …

CdTe epitaxial thin films, for use as a buffer layer for HgCdTe defectors, were grown on
GaAs (211) B using the molecular beam epitaxy method. Wet chemical etching (Everson …

CdO solution was produced using sol-gel technique and doped with Mn in 0.2%, 6% and
10% molar concentrations, respectively. Mn doped and undoped CdO solutions were coated …

Abstract Thick polycrystalline Cd 1− x Zn x Te films with x ranged from 0.37 to 0.80 were
obtained by the close spaced vacuum sublimation method. In order to investigate properties …

We examine high quality, single crystal CdTe epilayer grown by molecular beam epitaxy
(MBE) on ($2\, 1\, 1$) B GaAs substrate using both positions and full width at half maximums …

Cu 2 FeSnS 4 semiconductor used in the preparation of quaternary photodiodes was
synthesized using hydrothermal synthesis. The nanoparticles were then spin coated on a …