Metal oxide semiconductor-based Schottky diodes: a review of recent advances
NA Al-Ahmadi - Materials Research Express, 2020 - iopscience.iop.org
Abstract Metal-oxide-semiconductor (MOS) structures are essential for a wide range of
semiconductor devices. This study reviews the development of MOS Schottky diode, which …
semiconductor devices. This study reviews the development of MOS Schottky diode, which …
Chemical States, Structural, Electrical and Current Phenomenon Properties of a Au/Cobalt Phthalocyanine/Undoped-InP MPS-Type Diode with a CoPc Interlayer
A Usha Rani, V Rajagopal Reddy… - Journal of Inorganic and …, 2024 - Springer
This work reviews the impact of cobalt phthalocyanine (CoPc) interlayers on the electrical
and current transport properties of Au/undoped-InP Schottky diodes (SDs). The crystalline …
and current transport properties of Au/undoped-InP Schottky diodes (SDs). The crystalline …
Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4 –PVP interfacial layers
This study reports a comparative characterization of Au/n-Si Schottky diodes/contacts (SDs)
with hydrothermally synthesized ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers, which …
with hydrothermally synthesized ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers, which …
Jet Nebulizer Sprayed WO3-Nanoplate Arrays for High-Photoresponsivity Based Metal–Insulator–Semiconductor Structured Schottky Barrier Diodes
R Marnadu, J Chandrasekaran… - Journal of Inorganic and …, 2020 - Springer
Monoclinic WO 3-nanoplate arrays have been effectively deposited via simple jet nebulizer
spray pyrolysis technique at an optimized substrate temperature of 400° C. These WO 3 …
spray pyrolysis technique at an optimized substrate temperature of 400° C. These WO 3 …
Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range
We studied the I–V characteristics of Al/HfO2/p-Si structure investigated in a wide
temperature range of 80–400 K. The zero-bias barrier height (Φ B) and ideality factor (n) …
temperature range of 80–400 K. The zero-bias barrier height (Φ B) and ideality factor (n) …
Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer
The chemical, structural and electrical characteristics of a fabricated Au/Gd 2 O 3/n-GaN
heterostructure with gadolinium oxide (Gd 2 O 3) as an insulating layer are explored by XPS …
heterostructure with gadolinium oxide (Gd 2 O 3) as an insulating layer are explored by XPS …
Zirconia modified nanostructured MoO3 thin films deposited by spray pyrolysis technique for Cu/MoO3-ZrO2/p-Si structured Schottky barrier diode application
We report an inorganic aqueous solution route for pure molybdenum trioxide (MoO 3) and
zirconium oxide composite (MoO 3-ZrO 2) insulating layer of Cu/MoO 3-ZrO 2/p-Si metal …
zirconium oxide composite (MoO 3-ZrO 2) insulating layer of Cu/MoO 3-ZrO 2/p-Si metal …
Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes
Abstract Metal–insulator–semiconductor (MIS) structure of Cu/Zr–WO x/p-Si Schottky diodes
with different concentrations (0, 4 and 8 wt%) of Zr content were fabricated. The interfacial …
with different concentrations (0, 4 and 8 wt%) of Zr content were fabricated. The interfacial …
Fabrication of Cu/Y-MoO3/p-Si type Schottky barrier diodes by facile spray pyrolysis technique for photodetection application
P Vivek, J Chandrasekaran… - Sensors and Actuators A …, 2022 - Elsevier
The metal-semiconductor interface is a regular multitudinous photoelectric device like
Schottky barrier diodes (SBDs) applications. Here we have designed a metal-insulator …
Schottky barrier diodes (SBDs) applications. Here we have designed a metal-insulator …
Influence of metal work function and incorporation of Sr atom on WO3 thin films for MIS and MIM structured SBDs
In this work, two different structure of Cu/Sr-WO 3/p-Si metal-insulator-semiconductor (MIS)
and Cu/Sr-WO 3/FTO metal-insulator-metal (MIM) Schottky barrier diodes (SBDs) fabricated …
and Cu/Sr-WO 3/FTO metal-insulator-metal (MIM) Schottky barrier diodes (SBDs) fabricated …