In order to test whether the low-energy excitations explored extensively in amorphous solids
are indeed universal, all measurements published on the low-temperature thermal …

Ninety years after Zachariasen introduced the concept of continuous random network to
describe glassy materials and fifty years after Polk presented his celebrated, patiently hand …

The structure factor S (Q) of high purity amorphous Si membranes prepared by ion
implantation was measured over an extended Q range (0.03–55 Å− 1). Calculation of the …

Medium and high-energy x-ray diffraction has been used to study the atomic structure of
pure amorphous Si prepared by MeV Si implantation into crystalline silicon. Both as …

The ubiquitous low-energy excitations, known as two-level tunneling systems (TLSs), are
one of the universal phenomena of amorphous solids. Low temperature elastic …

We have measured the low temperature internal friction (Q− 1) of amorphous silicon (a− Si)
films. e-beam evaporation or S 28 i+ implantation leads to the temperature-independent Q …

Silicon–carbon (Si–C) nanocomposites have recently established themselves among the
most promising next-generation anode materials for lithium (Li)-ion batteries. Indeed …

Amorphous silicon a-Si was made by ion irradiation of crystalline silicon with 1× 10 15 Xe
ions cm− 2 at 77 K in the 1–4 MeV energy range. Thermal relaxation of the amorphous …

At low temperatures, dynamics in amorphous silicon occurs through a sequence of discrete
activated events that locally reorganize the topological network. Using the activation …

We used nanoindentation coupled with finite element modeling to determine the mechanical
properties of amorphous Si layers formed by self-ion implantation of crystalline Si at …