Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
GaN-based RF power devices and amplifiers
UK Mishra, L Shen, TE Kazior… - Proceedings of the IEEE, 2008 - ieeexplore.ieee.org
The rapid development of the RF power electronics requires the introduction of wide
bandgap material due to its potential in high output power density, high operation voltage …
bandgap material due to its potential in high output power density, high operation voltage …
Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs
This paper reports on state-of-the-art millimeter-wave power performance of N-polar GaN-
based metal–insulator–semiconductor high-electron-mobility transistors at 30 and 94 GHz …
based metal–insulator–semiconductor high-electron-mobility transistors at 30 and 94 GHz …
AlGaN/GaN HEMT With 300-GHz
JW Chung, WE Hoke, EM Chumbes… - IEEE Electron Device …, 2010 - ieeexplore.ieee.org
We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC
substrate with a record power-gain cutoff frequency (f max). To achieve this high f max, we …
substrate with a record power-gain cutoff frequency (f max). To achieve this high f max, we …
Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices
AlGaN/GaN high-electron mobility transistors (HEMTs) were fabricated on SiC substrates
with epitaxial layers grown by multiple suppliers and methods. Devices with gate lengths …
with epitaxial layers grown by multiple suppliers and methods. Devices with gate lengths …
Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT
We report 60-nm gate-length graded-channel AlGaN/GaN HEMTs fabricated with a mini-
field-plate T-gate. The devices exhibit an extrinsic f T and f MAX of 156 GHz and 308 GHz …
field-plate T-gate. The devices exhibit an extrinsic f T and f MAX of 156 GHz and 308 GHz …
High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation
K Harrouche, R Kabouche, E Okada… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical
characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm …
characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …