Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes
(SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other …

In the last two decades we have assisted to a rush towards finding a 3 He-replacing
technology capable of detecting neutrons emitted from fissile isotopes. The demand stems …

Radiation damage produced in 4H‐SiC n‐epilayers by electrons of different energies is
presented. Junction barrier Schottky power SiC diodes are irradiated with 1.05, 2.1, 5, and …

We report on influence of neutron radiation on majority and minority carrier traps in n-type 4
H-SiC. Together with the increase of the well-known carbon vacancy (VC) majority carrier …

We report on a bistable defect known as M-center, here introduced in n-type 4H-SiC by 2
MeV He ion implantation. Deep levels of the M-center are investigated by means of junction …

We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector
prototype to alpha and gamma radiation. We studied detectors of three different active area …

This review aims at providing a retrospective, as well as a description of the state-of-the-art
and future prospects regarding the theoretical and experimental characterisation of negative …

We investigate the migration mechanism of the carbon vacancy (VC) in silicon carbide (SiC)
using a combination of theoretical and experimental methodologies. The VC, commonly …

We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-
level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced …