A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory
For increasing the restricted bit-density in the conventional binary logic system, extensive
research efforts have been directed toward implementing single devices with a two …
research efforts have been directed toward implementing single devices with a two …
[HTML][HTML] ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
A quantum confined transport based on a zinc oxide composite nanolayer that has
conducting states with mobility edge quantization is proposed and was applied to develop …
conducting states with mobility edge quantization is proposed and was applied to develop …
Resonant Tunneling between Quantized Subbands in van der Waals Double Quantum Well Structure Based on Few-Layer WSe2
We demonstrate van der Waals double quantum well (vDQW) devices based on few-layer
WSe2 quantum wells and a few-layer h-BN tunnel barrier. Due to the strong out-of-plane …
WSe2 quantum wells and a few-layer h-BN tunnel barrier. Due to the strong out-of-plane …
First-principle investigations of cove edged GaN nanoribbon for nanoscale resonant tunneling applications
This work investigates the impact of cove edges in gallium nitride nanoribbons (GaNNRs) as
cove edges nanoribbons are energetically more stable and facilitates further tunability of …
cove edges nanoribbons are energetically more stable and facilitates further tunability of …
Locking of magnetization and Josephson oscillations at ferromagnetic resonance in a junction under external radiation
SA Abdelmoneim, YM Shukrinov, KV Kulikov… - Physical Review B, 2022 - APS
We demonstrate the locking of magnetic precession in the φ 0 Josephson junction by
external electromagnetic radiation through the locking of the Josephson oscillations in the …
external electromagnetic radiation through the locking of the Josephson oscillations in the …
Effects of electrode layer band structure on the performance of multilayer graphene–hBN–graphene interlayer tunnel field effect transistors
Interlayer tunnel field-effect transistors based on graphene and hexagonal boron nitride
(hBN) have recently attracted much interest for their potential as beyond-CMOS devices …
(hBN) have recently attracted much interest for their potential as beyond-CMOS devices …
Realizing negative differential resistance/switching phenomena in zigzag GaN nanoribbons by edge fluorination: A DFT investigation
SV Inge, NK Jaiswal… - Advanced Materials …, 2017 - Wiley Online Library
Gallium nitride (GaN) is a commonly used material for the high power electronic devices. Its
2D analog (layered GaN) can be a promising material in low power applications due to its …
2D analog (layered GaN) can be a promising material in low power applications due to its …
Pure valley current and negative differential resistance in optoelectronic superlattices based on monolayer transition metal dichalcogenides
DN Liu, Y Guo - Physical Review B, 2022 - APS
We investigate the possibility of achieving valley filtering and enhanced negative differential
resistance (NDR) in transition metal dichalcogenide (TMD)-based optoelectronic …
resistance (NDR) in transition metal dichalcogenide (TMD)-based optoelectronic …
A comprehensive analysis of strain profile in the heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) quantum dot heterostructures
In this study, we demonstrate a detailed strain analysis of the heterogeneously coupled
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …
Stranski Krastanov (SK) on Submonolayer (SML) InAs quantum dot heterostructures with …
First-principle investigations of negative differential resistance in zigzag boron nitride nanoribbons
This work investigates the structural stability, electronic and transport properties of zigzag
boron nitride nanoribbons (ZBNNRs) with hydrogenation/fluorination by using density …
boron nitride nanoribbons (ZBNNRs) with hydrogenation/fluorination by using density …