Hole-based spin qubits in strained planar germanium quantum wells have received
considerable attention due to their favorable properties and remarkable experimental …

We investigate the existence of linear-in-momentum spin orbit interactions in the valence
band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that …

Electrically driven spin resonance is a powerful technique for controlling semiconductor spin
qubits. However, it faces challenges in qubit addressability and off-resonance driving in …

One of the most promising platforms for the realization of spin-based quantum computing
are planar germanium quantum wells embedded between silicon–germanium barriers. To …

Silicon hole quantum dots have been the subject of considerable attention thanks to their
strong spin-orbit coupling enabling electrical control, a feature that has been demonstrated …

The investigation of orbital angular momentum (OAM) of delocalised Bloch electrons has
significantly advanced our understanding of magnetic, transport, and optical phenomena in …

Shuttling spins with high fidelity is a key requirement to scale up semiconducting quantum
computers, enabling qubit entanglement over large distances and favoring the integration of …

Holes in silicon quantum dots are promising for spin qubit applications due to the strong
intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics …

Hole spin qubits are rapidly emerging as the workhorse of semiconducting quantum
processors because of their large spin-orbit interaction, enabling fast all-electric operations …

Hole qubits in germanium quantum dots are promising candidates for coherent control and
manipulation of the spin degree of freedom through electric dipole spin resonance. We …