The silicon germanium (SiGe) heterojunction bipolar transistor (HBT) marketplace covers a
wide range of products and product requirements, particularly when combined with CMOS in …

The concept of concurrent multiband low-noise-amplifiers (LNAs) is introduced. A systematic
way to design concurrent multiband integrated LNAs in general is developed. Applications …

A truly modular and power-scalable architecture for low-power programmable frequency
dividers is presented. The architecture was used in the realization of a family of low-power …

This paper presents a rigorous design of microstrip bandpass filters with a dual-passband
response in parallel-coupled and vertical-stacked configurations. Based on resonance …

Issues associated with the integration of transceiver components on a single silicon
substrate are discussed. In particular, recently proposed receiver and transmitter …

This paper reports the first 24-GHz CMOS front-end in a 0.18-/spl mu/m process. It consists
of a low-noise amplifier (LNA) and a mixer and downconverts an RF input at 24 GHz to an IF …

All-CMOS radio transceivers and systems-on-a-chip are rapidly making inroads on a
wireless market that for years was dominated by bipolar and BiCMOS solutions. It is not a …

The nonlinearity behavior of CMOS current-switching mixers is investigated. By treating the
mixer as a periodically-time-varying weakly nonlinear circuit, we study the distortion-causing …

A step-impedance bandpass filter is presented for multimode wireless LANs. The filter has a
new dual-band feature of two tunable passbands at desired frequencies and high out-of …

A power amplifier for wireless applications has been implemented in a standard 0.25-/spl
mu/m CMOS technology. The power amplifier employs class-E topology to exploit its soft …