Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

The body of research on (III, Mn) V diluted magnetic semiconductors (DMSs) initiated during
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …

Recent results on achieving ferromagnetism in transition-metal-doped GaN, AlN and related
materials are discussed. The field of semiconductor spintronics seeks to exploit the spin of …

A microscopic model of indirect exchange interaction between transition metal impurities in
dilute magnetic semiconductors (DMS) is proposed. The hybridization of the impurity d …

The review concerns the fundamentals of spintronics (spin-transport electronics). The
material covers spin-spin interactions and spin relaxation in semiconductors as well as spin …

Intrinsic ferromagnetism in the high-quality wurtzite Ga 0.937 Mn 0.063 N semiconductor is
unambiguously demonstrated by both macroscopic magnetization measurements and x-ray …

This review summarizes the state-of-the-art in the search for room temperature
ferromagnetic semiconductors based on transition-metal-and rare-earth-doped nitrides. The …

US7170095B2 - Semi-insulating GaN and method of making the same - Google Patents
US7170095B2 - Semi-insulating GaN and method of making the same - Google Patents …