Due to the broad potential applications range in both military and civilian domains, solar-
blind photodetectors based on the ultrawide-bandgap semiconductor Ga 2 O 3, with high …

Abstract Gallium oxide (Ga2O3), with an ultrawide bandgap, is currently regarded as one of
the most promising materials for solar‐blind photodetectors (SBPDs), which are greatly …

Solar blind photodetectors with a cutoff wavelength within the 200–280 nm region is
attracting much attention due to their potential civilian and military applications. The …

The adverse effects of NO 2 on the environment and human health promote the
development of high-performance gas sensors to address the need for monitoring. Two …

Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV
imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide …

The emergence of the wide-band-gap semiconductor Ga2O3 has propelled it to the forefront
of solar blind detection activity owing to its key features. Although various architectures and …

Ga2O3 photodetectors with demonstrated high sensitivity provide a potential subversive
scheme for solar‐blind photodetection. However, the planar structure and the relatively slow …

Abstract Ga 2 O 3-based solar-blind ultraviolet photodetectors (PDs) have stimulated
extensive attention for covering both civilian and military applications. During the past …

We have achieved significantly improved device performance in solar-blind deep-ultraviolet
photodetectors fabricated from β-Ga2O3 thin films grown via metal–organic chemical vapor …

Ga 2 O 3-based heterojunction photodetectors integrate Ga 2 O 3 with partner
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …