Optoelectronic devices are advantageous in in-memory light sensing for visual information
processing, recognition, and storage in an energy-efficient manner. Recently, in-memory …

Two-dimensional (2D) materials, which exhibit planar-wafer technique compatibility and
pure electrically triggered communication, have established themselves as potential …

A high-κ based charge trap flash (CTF) memory structure using bandgap engineered
trapping layer HfO 2/Al 2 O 3/HfO 2 (HAH) has been demonstrated for multilevel cell …

Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF)
devices due to their high charge trap densities. The nature of the charge trapping sites in …

Flash memories are the preferred choice for data storage in portable gadgets. The charge
trapping nonvolatile flash memories are the main contender to replace standard floating …

A machine learning (ML) method was used to optimize the trap distribution of the charge trap
nitride (CTN) to simultaneously improve its performance/reliability (P/R) characteristics …

Based on the material analysis of the SiN layers presented in part I of this paper, we develop
accurate atomistic and electrical models for the silicon nitride (SiN)-based nonvolatile …

Abstract We analyzed Incremental Step Pulse Programming (ISPP) slope degradation to
improve the program efficiency of 3D NAND Flash memory using both measurement and …

In this work dielectric and electrical properties of Al-doped HfO2 layers deposited by plasma-
enhanced atomic layer deposition in dependence on the thickness and the added Al amount …

III-nitride heterostructure-based metal–insulator–semiconductor high-electron-mobility
transistors (MIS-HEMTs), compared with Schottky and p-GaN gate HEMTs, have …