Metal-oxide thin films are used extensively in electronic and energy applications. Solution
processing offers a potentially scalable and inexpensive deposition method to expand the …

Provided that electron transition ascribed to overlapping electron dominates the mechanism
of contact electrification of triboelectric nanogenerators (TENGs), the electron transfer …

Solution-processed metal-oxide thin-film transistors (TFTs) are considered as one of the
most favorable devices for next-generation, large-area flexible electronics. In this paper, we …

Low-temperature solution-processed inorganic–organic hybrid gate dielectrics are
considered as emerging candidates for future low-cost flexible electronic devices, which are …

In current study, the rare-reported solution-driven DyO x films have been prepared to act as
the dielectric layer of high performance InZnO/DyO x thin film transistors (TFTs). Annealing …

Radiation hardness is important for electronics operating in harsh radiation environments
such as outer space and nuclear energy industries. In this work, radiation-hardened solution …

Electrolyte-gated thin-film transistors (EGTs) with indium oxide channel, and expected
lifetime of three months, enable low-voltage operation (~ 1 V) in the field of printed …

Herein, we report a facile low-cost approach to high-k ZrO 2 dielectric films and integrated
devices by using lightwave (LW) irradiation induced chloride-based low-temperature …

The flourishing metal-oxide high-k dielectric materials have been regarded as the vital
components of low voltage operated flexible transparent electronic devices. We herein …

Metal-oxide high-k material is regarded as the promising building block for large area high-
performance flexible electronic devices. Here, we report that dysprosium oxide (DyO x) films …