Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Abstract 2D semiconductors have emerged both as an ideal platform for fundamental
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …

Heterogeneous interface design to boost interfacial polarization has become a feasible way
to realize high electromagnetic wave absorbing (EMA) performance of dielectric materials …

Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

Despite over a decade of intense research efforts, the full potential of two-dimensional
transition-metal dichalcogenides continues to be limited by major challenges. The lack of …

Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical
properties that make them attractive for future optoelectronic applications. Integration of …

To realize effective van der Waals (vdW) transistors, vdW dielectrics are needed in addition
to vdW channel materials. We study the dielectric properties of 32 exfoliable vdW materials …

The chemical approaches enabling selective atomic layer deposition (ALD) are gaining
growing interest. The selective ALD has unlocked attractive avenues for the development of …

Field-effect transistors (FETs) have tremendous applications in the electronics industry due
to their outstanding features such as small size, easy fabrication, compatibility with …

For ultra-scaled technology nodes at channel lengths below 12 nm, two-dimensional (2D)
materials are a potential replacement for silicon since even atomically thin 2D …