Single-electron phenomena in semiconductors

U Meirav, EB Foxman - Semiconductor Science and Technology, 1996 - iopscience.iop.org
The study of single-electron phenomena associated with tunnelling in semiconductor
nanostructures has emerged in recent years as a major forefront of condensed matter …

Mesoscopic devices

TJ Thornton - Reports on Progress in Physics, 1995 - iopscience.iop.org
This article is a review of an area of solid state physics which has come to be known as
mesoscopic devices. These structures have an active region ranging in size from 100 AA to …

Single‐electron memory

K Nakazato, RJ Blaikie, H Ahmed - Journal of applied physics, 1994 - pubs.aip.org
A single‐electron memory cell, in which one bit of information is represented by the excess
or shortfall of a precise number of electrons, is described. An experimental memory circuit …

Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

Y Takahashi, H Namatsu, K Kurihara… - … on Electron Devices, 1996 - ieeexplore.ieee.org
A Si single-electron transistor (SET) was fabricated by converting a one-dimensional (1-D)
Si wire on a SIMOX substrate into a small Si island with a tunneling barrier at each end by …

[图书][B] Single-electron devices and circuits in silicon

ZAK Durrani - 2009 - books.google.com
This book reviews research on single-electron devices and circuits in silicon. These devices
provide a means to control electronic charge at the one-electron level and are promising …

[图书][B] Carbon nanotubes and their applications

Q Zhang - 2012 - books.google.com
This book overviews the current status of research and development activities of CNTs in
nanodevices, nanomaterials, or nanofabrication. This book presents 15 state-of-the-art …

Single-electron memory

K Nakazato, RJ Blaikie, JRA Cleaver, H Ahmed - Electronics Letters, 1993 - IET
A single-electron memory cell, in which one bit of information is represented by+ n and− n
electron number states, is described. An experimental memory circuit for n≃ 100 was …

Single electron electronics: Challenge for nanofabrication

H Ahmed - Journal of Vacuum Science & Technology B …, 1997 - pubs.aip.org
Single electronics has the potential to overcome the limitations of complementary metal
oxide semiconductor (CMOS) technology as device dimensions shrink towards the 10 nm …

Nanoscience and nanotechnology in Europe

WM Tolles - Nanotechnology, 1996 - iopscience.iop.org
During six months from April to September 1994, the author visited 42 laboratories in eight
different European countries involved with research in nanostructures. The scientific thrusts …

Modeling of quantum transport in semiconductor devices

DK Ferry, HL Grubin - Solid State Physics, 1996 - Elsevier
Publisher Summary This chapter describes quantum transport theory and its application to
semiconductor devices. The quantum effects appear in many guises:(1) modification of the …