Solution‐processed HafSOx and ZircSOx inorganic thin‐film dielectrics and nanolaminates

JT Anderson, CL Munsee, CM Hung… - Advanced Functional …, 2007 - Wiley Online Library
New thin‐film dielectrics and nanolaminates have been synthesized via aqueous‐solution
deposition of Hf and Zr sulfates, where facile gelation and vitrification of the precursor …

Medium permittivity bismuth zinc niobate thin film capacitors

RL Thayer, CA Randall… - Journal of applied physics, 2003 - pubs.aip.org
Thin films were fabricated via metalorganic decomposition methods with three compositions:
Bi 1.5 Zn 1.0 Nb 1.5 O 7, Bi 1.5 Zn 0.5 Nb 1.5 O 6.5, and Bi 2 Zn 2/3 Nb 4/3 O 7. The Bi 1.5 …

Enhancing giant dielectric properties of Ta5+‐doped Na1/2Y1/2Cu3Ti4O12 ceramics by engineering grain and grain boundary

P Saengvong, N Chanlek… - Journal of the …, 2022 - Wiley Online Library
Various strategies to improve the dielectric properties of ACu3Ti4O12 (A= Sr, Ca, Ba, Cd,
and Na1/2Bi1/2) ceramics have widely been investigated. However, the reduction in the loss …

Effects of sintering condition on giant dielectric and nonlinear current-voltage properties of Na1/2Y1/2Cu3Ti3. 975Ta0. 025O12 ceramics

P Saengvong, J Boonlakhorn, J Jumpatam, N Chanlek… - Heliyon, 2023 - cell.com
The effects of sintering conditions on the microstructure, giant dielectric response, and
electrical properties of Na 1/2 Y 1/2 Cu 3 Ti 3.975 Ta 0.025 O 12 (NYCTTaO) were studied. A …

[HTML][HTML] Design of la-based MG-ta composite with high and tailorable properties for solid ta electrolytic capacitor

D Chen, J Fu, S Huang, J Huang, J Yang, S Ren, J Ma - Materials & Design, 2024 - Elsevier
Developing a convenient and efficient way of tantalum (Ta) electrolytic capacitor
manufacture process is of great importance in many fields, in which a time-saving and …

A Review on Potential Use of Cerium Oxide and Doped Cerium Oxide as High Dielectric Constant Seed Layers for Overgrowth of Cerium Oxide Nanostructures

SMA Nsar, Z Hassan, KY Cheong… - Materials Research …, 2024 - iopscience.iop.org
In this review, an introduction to nanostructured films focusing on cerium oxide (CeO2) as
high dielectric constant (k) material for silicon-based metal-oxide-semiconductor devices …

Detection of oxygen vacancy defect states in capacitors with ultrathin films by zero-bias thermally stimulated current spectroscopy

WS Lau, LL Leong, T Han, NP Sandler - Applied physics letters, 2003 - pubs.aip.org
Defect state D (0.8 eV) was experimentally detected in Ta 2 O 5 capacitors with ultrathin
(physical thickness< 10 nm) Ta 2 O 5 films using zero-bias thermally stimulated current …

Doped Ta2O5 and mixed HfO2–Ta2O5 films for dynamic memories applications at the nanoscale

E Atanassova, A Paskaleva, D Spassov - Microelectronics Reliability, 2012 - Elsevier
The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric
as a breakthrough to extend the potential of Ta2O5 toward meeting the criteria for future …

Growth characteristics and electrical properties of Ta2O5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal–insulator–metal …

MK Kim, WH Kim, T Lee, H Kim - Thin Solid Films, 2013 - Elsevier
We compared the suitability of tantalum pentoxide (Ta 2 O 5) films produced via thermal and
ozone based atomic layer deposition (Th-ALD and O 3-ALD, respectively) using …

The influence of composition on band gap and dielectric constant of anodic Al-Ta mixed oxides

A Zaffora, F Di Franco, M Santamaria, H Habazaki… - Electrochimica …, 2015 - Elsevier
Al-Ta mixed oxides were grown by anodizing sputter-deposited Al-Ta alloys of different
composition. Photocurrent spectra revealed a band gap, E g, slightly independent on Ta …