Solution‐processed HafSOx and ZircSOx inorganic thin‐film dielectrics and nanolaminates
JT Anderson, CL Munsee, CM Hung… - Advanced Functional …, 2007 - Wiley Online Library
New thin‐film dielectrics and nanolaminates have been synthesized via aqueous‐solution
deposition of Hf and Zr sulfates, where facile gelation and vitrification of the precursor …
deposition of Hf and Zr sulfates, where facile gelation and vitrification of the precursor …
Medium permittivity bismuth zinc niobate thin film capacitors
RL Thayer, CA Randall… - Journal of applied physics, 2003 - pubs.aip.org
Thin films were fabricated via metalorganic decomposition methods with three compositions:
Bi 1.5 Zn 1.0 Nb 1.5 O 7, Bi 1.5 Zn 0.5 Nb 1.5 O 6.5, and Bi 2 Zn 2/3 Nb 4/3 O 7. The Bi 1.5 …
Bi 1.5 Zn 1.0 Nb 1.5 O 7, Bi 1.5 Zn 0.5 Nb 1.5 O 6.5, and Bi 2 Zn 2/3 Nb 4/3 O 7. The Bi 1.5 …
Enhancing giant dielectric properties of Ta5+‐doped Na1/2Y1/2Cu3Ti4O12 ceramics by engineering grain and grain boundary
P Saengvong, N Chanlek… - Journal of the …, 2022 - Wiley Online Library
Various strategies to improve the dielectric properties of ACu3Ti4O12 (A= Sr, Ca, Ba, Cd,
and Na1/2Bi1/2) ceramics have widely been investigated. However, the reduction in the loss …
and Na1/2Bi1/2) ceramics have widely been investigated. However, the reduction in the loss …
Effects of sintering condition on giant dielectric and nonlinear current-voltage properties of Na1/2Y1/2Cu3Ti3. 975Ta0. 025O12 ceramics
The effects of sintering conditions on the microstructure, giant dielectric response, and
electrical properties of Na 1/2 Y 1/2 Cu 3 Ti 3.975 Ta 0.025 O 12 (NYCTTaO) were studied. A …
electrical properties of Na 1/2 Y 1/2 Cu 3 Ti 3.975 Ta 0.025 O 12 (NYCTTaO) were studied. A …
[HTML][HTML] Design of la-based MG-ta composite with high and tailorable properties for solid ta electrolytic capacitor
Developing a convenient and efficient way of tantalum (Ta) electrolytic capacitor
manufacture process is of great importance in many fields, in which a time-saving and …
manufacture process is of great importance in many fields, in which a time-saving and …
A Review on Potential Use of Cerium Oxide and Doped Cerium Oxide as High Dielectric Constant Seed Layers for Overgrowth of Cerium Oxide Nanostructures
In this review, an introduction to nanostructured films focusing on cerium oxide (CeO2) as
high dielectric constant (k) material for silicon-based metal-oxide-semiconductor devices …
high dielectric constant (k) material for silicon-based metal-oxide-semiconductor devices …
Detection of oxygen vacancy defect states in capacitors with ultrathin films by zero-bias thermally stimulated current spectroscopy
WS Lau, LL Leong, T Han, NP Sandler - Applied physics letters, 2003 - pubs.aip.org
Defect state D (0.8 eV) was experimentally detected in Ta 2 O 5 capacitors with ultrathin
(physical thickness< 10 nm) Ta 2 O 5 films using zero-bias thermally stimulated current …
(physical thickness< 10 nm) Ta 2 O 5 films using zero-bias thermally stimulated current …
Doped Ta2O5 and mixed HfO2–Ta2O5 films for dynamic memories applications at the nanoscale
E Atanassova, A Paskaleva, D Spassov - Microelectronics Reliability, 2012 - Elsevier
The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric
as a breakthrough to extend the potential of Ta2O5 toward meeting the criteria for future …
as a breakthrough to extend the potential of Ta2O5 toward meeting the criteria for future …
Growth characteristics and electrical properties of Ta2O5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal–insulator–metal …
We compared the suitability of tantalum pentoxide (Ta 2 O 5) films produced via thermal and
ozone based atomic layer deposition (Th-ALD and O 3-ALD, respectively) using …
ozone based atomic layer deposition (Th-ALD and O 3-ALD, respectively) using …
The influence of composition on band gap and dielectric constant of anodic Al-Ta mixed oxides
Al-Ta mixed oxides were grown by anodizing sputter-deposited Al-Ta alloys of different
composition. Photocurrent spectra revealed a band gap, E g, slightly independent on Ta …
composition. Photocurrent spectra revealed a band gap, E g, slightly independent on Ta …