Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, Al x Ga1–x N/AlN,
featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet …

High temperature brings adverse impacts on the energy efficiency, and even destroys a
semiconductor device. Here, a novel and cost‐effective strategy is proposed to boost the …

We develop a practical first-principles methodology to determine nonradiative carrier
capture coefficients at defects in semiconductors. We consider transitions that occur via …

Although the pulsed operation of AlGaN-based laser diodes at UV-C wavelengths has been
confirmed in the previous studies, continuous oscillation without cooling is difficult because …

Two-dimensional hexagonal boron nitride (hBN) has attracted much attention as a platform
for realizing integrated nanophotonics, and a collective effort has been focused on spin …

The structure of a number of GaN/AlGaN devices and their associated material growth and
processing issues are examined in some detail, and extrapolations are made to predict what …

Compact solid-state deep-ultraviolet (DUV) light-emitting diodes (LEDs) go far beyond
replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new …

This article proposes a new method of calculating conductivity in semiconductors, taking into
account lattice oscillations and thermal smears under the influence of temperature and …

We present the theoretical and experimental results for the electronic and optical properties
of atomically thin (1 and 2 monolayers) GaN quantum wells with AlN barriers. Strong …

A density functional theory (DFT) and semiclassical Boltzmann transport equations (BTE)
has been used to explore the electronic, magnetic, optical and transport properties of Ga 1 …