Progress in bulk GaN growth
K Xu, JF Wang, GQ Ren - Chinese Physics B, 2015 - iopscience.iop.org
Three main technologies for bulk GaN growth, ie, hydride vapor phase epitaxy (HVPE), Na-
flux method, and ammonothermal method, are discussed. We report our recent work in …
flux method, and ammonothermal method, are discussed. We report our recent work in …
Non-polar and semi-polar ammonothermal GaN substrates
R Kucharski, M Zając, R Doradziński… - Semiconductor …, 2012 - iopscience.iop.org
In this paper we review the developments of producing non-polar (ie m-plane and a-plane)
and semi-polar (ie (20.1)-plane) wafers by ammonothermal method. The growth method and …
and semi-polar (ie (20.1)-plane) wafers by ammonothermal method. The growth method and …
Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
Porous GaN/sapphire substrates have great application potential in the epitaxial growth of
high-quality and low-stress GaN crystals. In this study, the growth behavior of epitaxially …
high-quality and low-stress GaN crystals. In this study, the growth behavior of epitaxially …
[HTML][HTML] Evaluation of growth methods for the heteroepitaxy of non-polar (112 0) GAN on sapphire by MOVPE
Non-polar a-plane gallium nitride (GaN) films have been grown on r-plane (1 1¯ 02)
sapphire by metal organic vapour phase epitaxy (MOVPE). A total of five in situ defect …
sapphire by metal organic vapour phase epitaxy (MOVPE). A total of five in situ defect …
Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE
A Tanaka, O Barry, K Nagamatsu… - … status solidi (a), 2017 - Wiley Online Library
In this study, GaN m‐plane Schottky barrier diodes fabricated with a metalorganic vapor‐
phase epitaxy on a GaN substrate were investigated using emission microscope …
phase epitaxy on a GaN substrate were investigated using emission microscope …
Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures
P Strak, K Koronski, K Sakowski, K Sobczak… - Journal of Alloys and …, 2020 - Elsevier
An analysis of the main recombination modes in nitrides, based on new method of data
treatment is proposed for the determination of the carrier recombination processes in …
treatment is proposed for the determination of the carrier recombination processes in …
Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
We report on the morphological evolution of InGaN/GaN light-emitting diodes (LEDs) grown
on nominally on-axis and intentionally misoriented free-standing m-plane GaN substrates …
on nominally on-axis and intentionally misoriented free-standing m-plane GaN substrates …
m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates
A Tanaka, Y Ando, K Nagamatsu, M Deki… - … status solidi (a), 2018 - Wiley Online Library
In this study, GaN m‐plane Schottky barrier diodes are fabricated by metalorganic vapor‐
phase epitaxy (MOVPE) on several off‐angle gallium nitride (GaN) substrates, and the off …
phase epitaxy (MOVPE) on several off‐angle gallium nitride (GaN) substrates, and the off …
Determination of lateral block size and mosaicity of crystals using X‐ray diffraction from the edge of the sample
J Serafińczuk - Crystal Research and Technology, 2016 - Wiley Online Library
In this paper a novel lateral block size characterization method based on X‐ray
diffractometry (XRD) is presented. The developed method based on scans of plans …
diffractometry (XRD) is presented. The developed method based on scans of plans …
Plasma enhanced growth of GaN single crystalline layers from vapour phase
R Zwierz - 2014 - opus4.kobv.de
Gallium nitride (GaN) is a III-V semiconductor, characterized by direct, wide band gap of 3.4
eV at RT. As a material of particular interest for opto-and power electronics applications, it …
eV at RT. As a material of particular interest for opto-and power electronics applications, it …