In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …

Abstract Phase-Change Memory (PCM) is one of the most recent technologies to enter the
embedded memory market for consumer-and automotive-grade applications. However …

In this article, the development history and the technical hurdles of phase-change memory
(PCM) are reviewed and recent progress and future directions are discussed. Prospects of …

Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique
nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently …

Cross point memories are ideally suited to fill computer memory hierarchy gaps of memory
capacity-cost and storage performance. System innovations exploiting the capability of 3D …

In-memory computing (IMC) aims at executing numerical operations via physical processes,
such as current summation and charge collection, thus accelerating common computing …

In this study, we comprehensively investigated the effect of Si doping on a boron-tellurium (B
4 Te 6) based binary ovonic threshold switch (OTS). Through Si doping, we achieved an …

Modern data-centric computing applications are increasingly demanding in terms of memory
density and performance. The cross-point memory architecture based on the two-terminal …

This study investigates the effect of N-doping on the nanoscale (d= 30 nm) BTe ovonic
threshold switch (OTS) device to achieve ideal selector characteristics in terms of leakage …

Engineering of chalcogenide phase-change materials at the nanoscale is required to
improve the performances of ultimate size memory devices and reduce their power …