Dielectric-Based Rear Surface Passivation Approaches for Cu(In,Ga)Se2 Solar Cells—A Review
This review summarizes all studies which used dielectric-based materials as a passivation
layer at the rear surface of copper indium gallium (di) selenide, Cu (In, Ga) Se2,(CIGS) …
layer at the rear surface of copper indium gallium (di) selenide, Cu (In, Ga) Se2,(CIGS) …
Strategies to Enhance the Performance of Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells by Doping Approaches
DS Kim, BK Min - Korean Journal of Chemical Engineering, 2024 - Springer
With the deepening climate emergency and the growing imperative to move beyond fossil
fuels, Cu (In, Ga)(S, Se) 2—commonly referred to as CIGS—thin-film solar cells are gaining …
fuels, Cu (In, Ga)(S, Se) 2—commonly referred to as CIGS—thin-film solar cells are gaining …
Interface engineering of ultrathin Cu(In,Ga)Se2 solar cells on reflective back contacts
Abstract Cu (In, Ga) Se2‐based (CIGS) solar cells with ultrathin (≤ 500 nm) absorber layers
suffer from the low reflectivity of conventional Mo back contacts. Here, we design and …
suffer from the low reflectivity of conventional Mo back contacts. Here, we design and …
Diode factor in solar cells with metastable defects and Back contact recombination
To achieve a high fill factor, a small diode factor close to 1 is essential. The optical diode
factor determined by photoluminescence is the diode factor from the neutral zone of the …
factor determined by photoluminescence is the diode factor from the neutral zone of the …
Impact of Na diffusion on Cu (In, Ga) Se2 solar cells: unveiling the role of active defects using thermal admittance spectroscopy
Abstract In this work, Cu (In, Ga) Se 2 (CIGS) based thin-film solar cells have been treated
with the alkali element via incorporating Mo: Na layer into the device structure. A 600 nm …
with the alkali element via incorporating Mo: Na layer into the device structure. A 600 nm …
[HTML][HTML] The use of HfO2 in a point contact concept for front interface passivation of Cu (In, Ga) Se2 solar cells
J Löckinger, S Nishiwaki, B Bissig, G Degutis… - Solar Energy Materials …, 2019 - Elsevier
We report on the use of a high bandgap metal-oxide at the front interface of Cu (In, Ga) Se 2
(CIGS) solar cells in a point contact concept for reduced interface recombination. Highly …
(CIGS) solar cells in a point contact concept for reduced interface recombination. Highly …
Ultrathin Cu(In,Ga)Se2 Solar Cells with a Passivated Back Interface: A Comparative Study between Mo and In2O3:Sn Back Contacts
Point-contact passivation layers have been proven beneficial in most solar cells (SCs).
However, the latest theoretical simulations suggested that a high back-contact …
However, the latest theoretical simulations suggested that a high back-contact …
Rear surface passivation of ultra-thin CIGS solar cells using atomic layer deposited HfOx
In this work, hafnium oxide layer is investigated as rear surface passivation layer for ultra-
thin (550 nm) CIGS solar cells. Point contact openings in the passivation layer are realized …
thin (550 nm) CIGS solar cells. Point contact openings in the passivation layer are realized …
Innovative and industrially viable approach to fabricate AlOx rear passivated ultra-thin Cu (In, Ga) Se2 (CIGS) solar cells
In this work, an industrially viable and novel rear surface passivation approach for Copper
Indium Gallium di-Selenide, Cu (In, Ga) Se 2, CIGS, ultra-thin (500 nm) solar cells is …
Indium Gallium di-Selenide, Cu (In, Ga) Se 2, CIGS, ultra-thin (500 nm) solar cells is …
In‐depth analysis of potential‐induced degradation in a commercial CIGS PV module
P Yilmaz, J de Wild, R Aninat, T Weber… - Progress in …, 2023 - Wiley Online Library
A post‐mortem analysis is conducted after potential‐induced degradation (PID) of a
commercial copper‐indium‐gallium‐selenide (CIGS) photovoltaic module. After PID, the …
commercial copper‐indium‐gallium‐selenide (CIGS) photovoltaic module. After PID, the …