The body of research on (III, Mn) V diluted magnetic semiconductors (DMSs) initiated during
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …

We review the phenomenon of ferromagnetic resonance (FMR) in ferromagnetic (FM) Ga 1−
x Mn x As semiconductor alloys and their heterostructures in thin film form. We will show that …

We have measured the optical constants of Ga 1− x Mn x As from 0.62 to 6 eV, using
spectroscopic ellipsometry. The second derivatives of the dielectric function are examined …

We present a method for the determination of the local concentrations of interstitial and
substitutional Mn atoms and As antisite defects in GaMnAs. The method relies on the …

The interlayer coupling between (Ga, Mn) As ferromagnetic layers in all-semiconductor
superlattices is studied theoretically within a tight-binding model, which takes into account …

The impact of P and Mn incorporation into GaAs layers on their electronic and band
structures as well as magnetic and structural properties has been studied. A set of the …

Structural analysis of epitaxial layers of the (Ga, Mn)(Bi, As) quaternary dilute magnetic
semiconductor (DMS), together with investigations of their magnetotransport properties, has …

In situ postgrowth annealing of (Ga, Mn) As layers under As capping is adequate for
achieving high Curie temperatures (TC) in a similar way as ex situ annealing in air or in N 2 …

We report on measurements of the crystal structure and hole density in a series of as-grown
and annealed GaMnAs samples. The measured hole densities are used to obtain the …

Impact of Bi incorporation into (Ga, Mn) As layers on their electronic-and band-structures as
well as their magnetic and structural properties has been studied. Homogenous (Ga, Mn)(Bi …