After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of
diminishing returns. The use of new semiconductor channel materials with improved …

This overview article sheds light into the diverse notions and terms associated with 3-D
circuits. It categorizes and classifies the various technologies/techniques and helps the …

We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …

Nanowires are considered building blocks for the ultimate scaling of MOS transistors,
capable of pushing devices until the most extreme boundaries of miniaturization thanks to …

Gate-all-around (GAA) is a promising MOSFET structure to continue scaling down the size of
CMOS devices beyond 7 nm technology node. This paper gives an overview of different …

In this brief, we computationally examine electrical characteristics of stacked gate-all-around
Si nanosheet MOSFETs (GAA NS-FETs) with and without metal sidewall (MSW) …

The process of patterning the next generation of structures that become transistors,
capacitors, or interconnects continues to challenge the semiconductor industry. A critical …

In this article, we present the first detailed experimental study of electrothermal effects in 3-D
vertical gate-all-around (GAA) junctionless nanowire transistors (JLNTs). In contrast with …

Silicon germanium (Si x Ge1–x or SiGe) is an important semiconductor material for the
fabrication of nanowire-based gate-all-around transistors in the next-generation logic and …

Increased sensitivity of FinFET technology to single-event latch-up (SEL) was found during
64-MeV proton beam accelerated testing and confirmed with neutron beam experiments …