Current-induced spin-orbit torque (SOT) is attracting increasing interest and exciting
significant research activity. We aim to provide a comprehensive review of recent progress in …

Spintronic and nanomagnetic devices often derive their functionality from layers of different
materials and the interfaces between them. We discuss the opportunities that arise from …

Spintronics, that is, the utilization of electron spin to enrich the functionality of
microelectronics, has led to the inception of numerous novel devices, particularly magnetic …

The ability of spintronic devices to utilize an electric current for manipulating the
magnetization has resulted in large-scale developments, such as magnetic random access …

Control of magnetization in magnetic nanostructures is essential for development of
spintronic devices because it governs fundamental device characteristics such as energy …

Perpendicularly magnetized structures that are switchable using a spin current under field-
free conditions can potentially be applied in spin–orbit torque magnetic random-access …

Perpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net
magnetization and high thermal stability as well as easy reading and writing characteristics …

Science, engineering, and medicine ultimately demand fast information processing with ultra-
low power consumption. The recently developed spin-orbit torque (SOT)-induced …

Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for
the development of nonvolatile magnetic memory and computing technologies due to their …

Electrical‐current‐induced magnetization switching is a keystone concept in the
development of spintronics devices. In the last few years, this field has experienced a …