On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications
This work investigates the influence of Single Event Transient (SET) effect on Double
Channel Dual Gate (DC-DG) AlGaN/GaN HEMT using TCAD simulations. Both Single …
Channel Dual Gate (DC-DG) AlGaN/GaN HEMT using TCAD simulations. Both Single …
Impact of composition and thickness of step-graded AlGaN barrier in AlGaN/GaN heterostructures
H Liu, H Huang, K Wang, Z Xie, H Wang - Materials Science in …, 2024 - Elsevier
We propose an optimization method to change the Al component and the thickness of step-
graded AlGaN barrier to achieve better electrical performance of the device. Based on the …
graded AlGaN barrier to achieve better electrical performance of the device. Based on the …
[HTML][HTML] Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks
K Tian, J Hu, J Du, Q Yu - Electronics, 2024 - mdpi.com
To improve the breakdown voltage (BV), a GaN-based high-electron-mobility transistor with
a hybrid AlGaN back barrier (HBB-HEMT) was proposed. The hybrid AlGaN back barrier …
a hybrid AlGaN back barrier (HBB-HEMT) was proposed. The hybrid AlGaN back barrier …
Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT
An experimental examination of AlGaN/GaN/SiC HEMT multi-bias behaviour is presented in
this paper to add to the enormous amount of device performance data in varied operating …
this paper to add to the enormous amount of device performance data in varied operating …
Effect of lateral inhomogeneous AlGaN barrier layer on electronic properties of GaN HEMTs
Y Guo, Y Ren, Z Peng, X Ma, S Li, S Zheng - Micro and Nanostructures, 2024 - Elsevier
In this study, an AlGaN/GaN high electron mobility transistor with lateral inhomogeneous
AlGaN barrier layer (LI-AlGaN HEMT) is proposed and studied systematically. The LI-AlGaN …
AlGaN barrier layer (LI-AlGaN HEMT) is proposed and studied systematically. The LI-AlGaN …
Numerical Investigation of Zero-Dimensional Freestanding Nanowire FER-AlGaN/GaN HEMTs for Low-Power Applications
The numerical model for AlGaN/GaN High Electron Mobility Transistors (HEMTs) device of
Zero-Dimensional Freestanding Nanowire Field-Effect Rectifiers (NW-FER) is developed by …
Zero-Dimensional Freestanding Nanowire Field-Effect Rectifiers (NW-FER) is developed by …
Localized anodization of 4H–SiC by electrochemical etching with constant current mode in KOH solutions
S Zhao, S Yang, Y Li, G Yan, W Zhao, L Wang… - Micro and …, 2023 - Elsevier
With the increasing application of SiC, it has become increasingly evident that high
hardness and difficulty in etching are major issues. Wet etching is a popular method due to …
hardness and difficulty in etching are major issues. Wet etching is a popular method due to …