Phase-change materials based on tellurides are widely used for optical storage (DVD and
Blu-ray disks), non-volatile random access memories and for development of neuromorphic …

Zinc oxysulfide nanostructures may have physical and chemical properties that are different
from ZnS or ZnO. Therefore, Cu-doped oxysulfide nanostructures were prepared by vapor …

Zinc oxysulfide (ZnOS) nano-thin film has been deposited on a p-type silicon and glass
substrate via the hydrothermal deposition method at a temperature of 200 C. The …

Zinc oxyselenide—Zn (O, Se)—could become a novel buffer layer in solar cells and a
functional layer in different optoelectronic devices. In this study, we systematically …

The global needs for ecological friendliness and sustainable development in the
photovoltaic (PV) market have led to an increased demand to fabricate solar cells in an …

Zinc oxy-selenide Zn (O, Se) is a novel material, that can replace the toxic CdS buffer layer
in thin film solar cells and other optoelectronic devices. In this paper a systematic study of …

In this work, c-axis preferentially oriented Be x Zn 1-x O 1-y S y (BeZnOS) quaternary alloy
films were prepared successfully on c-plane sapphire by pulsed laser deposition for the first …

Amorphous oxide semiconductors have been widely studied as key materials for flat panel
displays and flexible electronics devices. Recently, it has been reported that an amorphous …

Abstract Ternary Zn (O, Se) films were grown onto glass and p-type Si substrates by pulsed
laser deposition at substrate temperature of 500° C, to investigate their optical properties …

Zinc oxy-selenide (Zn (O, Se)) is a prospective semiconductor that could be applied as a
buffer layer in optoelectronic devices as an alternative for toxic CdS layers. A complete …