Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic
In this work we show a new low-temperature polycrystalline silicon (LTPS) thin film transistor
(TFT) fabrication process on polyimide (PI) layers. The PI is spun on Si-wafer used as rigid …
(TFT) fabrication process on polyimide (PI) layers. The PI is spun on Si-wafer used as rigid …
Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors
T Takahashi, MN Fujii, R Miyanaga… - Applied Physics …, 2020 - iopscience.iop.org
We report the existence of a degradation mode under AC stress in high-mobility amorphous
In–W–Zn–O (IWZO) thin-film transistors (TFTs). The application of gate pulse to the IWZO …
In–W–Zn–O (IWZO) thin-film transistors (TFTs). The application of gate pulse to the IWZO …
Degradation behaviors of metal-induced laterally crystallized n-type polycrystalline silicon thin-film transistors under DC bias stresses
M Xue, M Wang, Z Zhu, D Zhang… - IEEE Transactions on …, 2007 - ieeexplore.ieee.org
Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized
polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc …
polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc …
A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of highly doped layers
A novel fabrication process for low-temperature (< 500° C) polysilicon thin film transistors
(TFTs) is proposed. The main features of such process are:(i) the source and drain contacts …
(TFTs) is proposed. The main features of such process are:(i) the source and drain contacts …
Short channel effects on LTPS TFT degradation
DC Moschou, CG Theodorou… - Journal of Display …, 2012 - ieeexplore.ieee.org
Double-gate (DG) polysilicon thin-film transistors (TFTs) are considered very important for
future large area electronics, due to their capability to electrically control TFT characteristics …
future large area electronics, due to their capability to electrically control TFT characteristics …
Hot-carrier-induced degradation of LDD polysilicon TFTs
A Valletta, L Mariucci… - IEEE transactions on …, 2005 - ieeexplore.ieee.org
In order to improve the stability of polysilicon thin-film transistors (TFTs) several drain
junction architectures have been proposed. In this paper, the hot-carrier (HC) related …
junction architectures have been proposed. In this paper, the hot-carrier (HC) related …
Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs)
FV Farmakis, CA Dimitriadis, J Brini, G Kamarinos… - Solid-State …, 1999 - Elsevier
A study on hot-carrier phenomena in high temperature processed undoped and
hydrogenated n-channel polysilicon thin film transistors (TFTs) is presented. First, stress …
hydrogenated n-channel polysilicon thin film transistors (TFTs) is presented. First, stress …
Hot carrier-induced degradation of gate overlapped lightly doped drain (GOLDD) polysilicon TFTs
Hot-carrier injection is known to produce interface states and oxide trapped charge, which,
depending upon their spatial distribution, can strongly influence the local electric fields as …
depending upon their spatial distribution, can strongly influence the local electric fields as …
A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTs
Hot-carrier induced degradation is a main issue in the electrical stability of polysilicon TFTs
and drain field relief architectures have been introduced, such as lightly doped drain (LDD) …
and drain field relief architectures have been introduced, such as lightly doped drain (LDD) …
Electrical stress degradation of small-grain polysilicon thin-film transistors
This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film
transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small …
transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small …