Spin-dependent tunnelling in magnetic tunnel junctions
EY Tsymbal, ON Mryasov… - Journal of Physics …, 2003 - iopscience.iop.org
The phenomenon of electron tunnelling has been known since the advent of quantum
mechanics, but continues to enrich our understanding of many fields of physics, as well as …
mechanics, but continues to enrich our understanding of many fields of physics, as well as …
Material matters in superconducting qubits
CE Murray - Materials Science and Engineering: R: Reports, 2021 - Elsevier
The progress witnessed within the field of quantum computing has been enabled by the
identification and understanding of interactions between the state of the quantum bit (qubit) …
identification and understanding of interactions between the state of the quantum bit (qubit) …
Ni–NiO–Ni tunnel junctions for terahertz and infrared detection
PCD Hobbs, RB Laibowitz, FR Libsch - Applied optics, 2005 - opg.optica.org
We present complete experimental determinations of the tunnel barrier parameters (two
barrier heights, junction area, dielectric constant, and extrinsic series resistance) as a …
barrier heights, junction area, dielectric constant, and extrinsic series resistance) as a …
Antiferromagnetic interlayer exchange coupling between Fe3O4 layers across a nonmagnetic MgO dielectric layer
We have investigated the interlayer exchange coupling between the epitaxial spinel Fe 3 O
4 layers across an insulating nonmagnetic MgO spacer. The epitaxial structure used for …
4 layers across an insulating nonmagnetic MgO spacer. The epitaxial structure used for …
The use of Simmons' equation to quantify the insulating barrier parameters in tunnel junctions
LS Dorneles, DM Schaefer, M Carara… - Applied physics …, 2003 - pubs.aip.org
We have analyzed the electron transport processes in Al/AlO x/Al junctions. The samples
were produced by glow-discharge-assisted oxidation of the bottom electrode. The nonlinear …
were produced by glow-discharge-assisted oxidation of the bottom electrode. The nonlinear …
Annealing effects on the magnetic and magnetotransport properties of iron oxide nanoparticles self-assemblies
In magnetic tunnel junctions based on iron oxide nanoparticles the disorder and the
oxidation state of the surface spin as well as the nanoparticles functionalization play a …
oxidation state of the surface spin as well as the nanoparticles functionalization play a …
Impact of interfacial roughness on tunneling conductance and extracted barrier parameters
The net tunneling conductance of metal-insulator-metal tunnel junctions is studied using a
distribution of barrier thicknesses consistent with interfacial roughness typical of state-of-the …
distribution of barrier thicknesses consistent with interfacial roughness typical of state-of-the …
Microscopic origin of critical current fluctuations in large, small, and ultra-small area Josephson junctions
We analyze data on the critical current and normal-state resistance noise in Josephson
junctions and argue that the noise in the critical current is due to a mechanism that is absent …
junctions and argue that the noise in the critical current is due to a mechanism that is absent …
[HTML][HTML] Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions
Micrometer-sized Al/AlO x/Y tunnel junctions were fabricated by the electron-beam
lithography technique. The thin (≈ 1.5–2 nm thickness) insulating AlO x layer was grown on …
lithography technique. The thin (≈ 1.5–2 nm thickness) insulating AlO x layer was grown on …
Fabrication of magnetic tunnel junctions
Magnetic tunnel junctions (MTJ) are promising candidates for the spintronic devices. They
are not only important for the futuristic memory devices but also interesting for their …
are not only important for the futuristic memory devices but also interesting for their …